JPH0455Y2 - - Google Patents
Info
- Publication number
- JPH0455Y2 JPH0455Y2 JP12304885U JP12304885U JPH0455Y2 JP H0455 Y2 JPH0455 Y2 JP H0455Y2 JP 12304885 U JP12304885 U JP 12304885U JP 12304885 U JP12304885 U JP 12304885U JP H0455 Y2 JPH0455 Y2 JP H0455Y2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- electrode plate
- shield plate
- electrode
- grounding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12304885U JPH0455Y2 (en]) | 1985-08-09 | 1985-08-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12304885U JPH0455Y2 (en]) | 1985-08-09 | 1985-08-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236067U JPS6236067U (en]) | 1987-03-03 |
| JPH0455Y2 true JPH0455Y2 (en]) | 1992-01-06 |
Family
ID=31013797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12304885U Expired JPH0455Y2 (en]) | 1985-08-09 | 1985-08-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0455Y2 (en]) |
-
1985
- 1985-08-09 JP JP12304885U patent/JPH0455Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236067U (en]) | 1987-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3080843B2 (ja) | 薄膜形成方法及び装置 | |
| JP3182702B2 (ja) | 低圧プラズマでサブストレートを処理する方法および装置 | |
| EP0659905A1 (en) | Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder | |
| TWI811331B (zh) | 具有拆分窗的微波電漿源 | |
| JPH0455Y2 (en]) | ||
| JP3631903B2 (ja) | プラズマ化学蒸着装置 | |
| JPS6277479A (ja) | プラズマｃｖｄ法による薄膜形成方法 | |
| US5718769A (en) | Plasma processing apparatus | |
| JPH05306462A (ja) | プラズマｃｖｄ装置 | |
| JPH0649936B2 (ja) | バイアススパツタリング装置 | |
| JP3034358B2 (ja) | プラズマ処理装置 | |
| JPH0454Y2 (en]) | ||
| JPH062952B2 (ja) | プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法 | |
| JPS641958Y2 (en]) | ||
| JP2586081Y2 (ja) | プラズマ処理装置 | |
| JP3100279B2 (ja) | 真空装置への高周波電力供給方法 | |
| JPH065522A (ja) | 高周波プラズマｃｖｄ装置 | |
| JPH05343338A (ja) | プラズマｃｖｄ装置 | |
| JPH02105527A (ja) | プラズマｃｖｄ装置 | |
| JP3310875B2 (ja) | プラズマｃｖｄ装置 | |
| JP2809041B2 (ja) | プラズマｃｖｄ装置およびプラズマｃｖｄ方法 | |
| JPS59127832A (ja) | プラズマｃｖｄ装置 | |
| JPH0891987A (ja) | プラズマ化学蒸着装置 | |
| JP2832322B2 (ja) | 半導体製造装置 | |
| JPS6323825B2 (en]) |